HUASHUO · FETs & Power MOSFETs · MPN HSU55N02
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 23nC@4.5V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 29W |
| RDS(on) | 8.6mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.25nF |
| Type | N-Channel |
N-Channel 20V 55A 29W Surface Mount TO-252