HUASHUO · FETs & Power MOSFETs · MPN HSU4P25
No reviews yet — be the first to review HUASHUO HSU4P25.
| Gate Charge(Qg) | 8.9nC@4.5V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 4Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 500pF |
| Type | P-Channel |
P-Channel 250V 4A 2W Surface Mount TO-252