HUASHUO · FETs & Power MOSFETs · MPN HSU48N12A
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| Drain to Source Voltage | 120V |
|---|---|
| Gate Charge(Qg) | 20.6nC@10V |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 113W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.39nF |
N-Channel 120V 48A 113W Surface Mount TO-252