HUASHUO · FETs & Power MOSFETs · MPN HSU4600
No reviews yet — be the first to review HUASHUO HSU4600.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 20nC@4.5V;26nC@4.5V |
| Current - Continuous Drain(Id) | 45A;25A |
| Output Capacitance(Coss) | 221pF;198pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 35W |
| RDS(on) | 5.6mΩ@7.5V;9.5mΩ@7.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF;165pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.572nF;1.905nF |
| Type | N-Channel + P-Channel |
20V 700mV 35W 1 N-Channel + 1 P-Channel N-Channel + P-Channel TO-252-4L Single FETs, MOSFETs RoHS