HUASHUO HSU4119

HUASHUO · FETs & Power MOSFETs · MPN HSU4119

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Specifications

Gate Charge(Qg)190nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)780pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)660pF
RDS(on)3.5mΩ@10V;4.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)10.7nF
TypeP-Channel

Technical details

P-Channel 40V 120A 135W Surface Mount TO-252

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