HUASHUO HSU4103

HUASHUO · FETs & Power MOSFETs · MPN HSU4103

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Specifications

Gate Charge(Qg)11.5nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)102pF
RDS(on)32mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.415nF

Technical details

P-Channel 40V 27A 35W Surface Mount TO-252-2

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