HUASHUO · FETs & Power MOSFETs · MPN HSU3119
No reviews yet — be the first to review HUASHUO HSU3119.
| Gate Charge(Qg) | 210nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 135W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.21nF |
| RDS(on) | 3mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 12.7nF |
| Type | P-Channel |
P-Channel 30V 130A 135W Surface Mount TO-252-2L