HUASHUO HSU3103

HUASHUO · FETs & Power MOSFETs · MPN HSU3103

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Specifications

Gate Charge(Qg)12.5nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)1.345nF

Technical details

P-Channel 30V 35A 34.7W Surface Mount TO-252-2

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