HUASHUO HSU30N20

HUASHUO · FETs & Power MOSFETs · MPN HSU30N20

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Specifications

Configuration-
Gate Charge(Qg)49nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation150W
RDS(on)48mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)86pF
Number1 N-channel
Input Capacitance(Ciss)3.49nF

Technical details

N-Channel 200V 30A 150W Surface Mount TO-252

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