HUASHUO HSU30N02

HUASHUO · FETs & Power MOSFETs · MPN HSU30N02

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)13nC@4.5V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation40W
RDS(on)8mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)94pF
Number1 N-channel
Input Capacitance(Ciss)1.2nF

Technical details

N-Channel 20V 30A 40W Surface Mount TO-252-2

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