HUASHUO HSU28N15

HUASHUO · FETs & Power MOSFETs · MPN HSU28N15

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)40nC@4.5V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)46mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.755nF
TypeN-Channel

Technical details

N-Channel 150V 30A 115W Surface Mount TO-252-2

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