HUASHUO HSU15N10

HUASHUO · FETs & Power MOSFETs · MPN HSU15N10

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)12nC@10V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation41W
RDS(on)-
Reverse Transfer Capacitance (Crss@Vds)37pF
Number1 N-channel
Input Capacitance(Ciss)1.135nF
TypeN-Channel

Technical details

N-Channel 100V 15A 41W Surface Mount TO-252

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