HUASHUO HSU15810C

HUASHUO · FETs & Power MOSFETs · MPN HSU15810C

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)72nC@10V
Output Capacitance(Coss)4.725nF
Current - Continuous Drain(Id)112A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.725nF
TypeN-Channel

Technical details

N-Channel 100V 112A 104W Surface Mount TO-252-2L

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