HUASHUO HSU12P10

HUASHUO · FETs & Power MOSFETs · MPN HSU12P10

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)-
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation35W
RDS(on)270mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 100V 12A 35W Surface Mount TO-252-2

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