HUASHUO HSU100P04

HUASHUO · FETs & Power MOSFETs · MPN HSU100P04

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Specifications

Gate Charge(Qg)115nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)930pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52.1W
Reverse Transfer Capacitance (Crss@Vds)722pF
RDS(on)5.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.09nF
TypeP-Channel

Technical details

P-Channel 40V 100A 52.1W Surface Mount TO-252-2

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