HUASHUO HSU100P03

HUASHUO · FETs & Power MOSFETs · MPN HSU100P03

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)989pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation105W
Reverse Transfer Capacitance (Crss@Vds)700pF
RDS(on)5.3mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)9.3nF
TypeP-Channel

Technical details

P-Channel 30V 100A 105W Surface Mount TO-252-2

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