HUASHUO HSU0903

HUASHUO · FETs & Power MOSFETs · MPN HSU0903

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Specifications

Gate Charge(Qg)15nC@4.5V;19nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)24pF;29pF
RDS(on)255mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)66pF;1.229nF

Technical details

N-Channel+P-Channel Array 100V 8A 1.5W Surface Mount TO-252-4

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