HUASHUO HSU0139

HUASHUO · FETs & Power MOSFETs · MPN HSU0139

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Specifications

Gate Charge(Qg)92nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation102W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)50mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.516nF

Technical details

P-Channel 100V 30A 102W Surface Mount TO-252

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