HUASHUO HSU0117

HUASHUO · FETs & Power MOSFETs · MPN HSU0117

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Specifications

Gate Charge(Qg)150nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)25A
Output Capacitance(Coss)155pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation60W
RDS(on)40mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)148pF
Number1 P-Channel
Input Capacitance(Ciss)8.476nF
TypeP-Channel

Technical details

100V 25A 1.7V 60W 40mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

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