HUASHUO HSU0115

HUASHUO · FETs & Power MOSFETs · MPN HSU0115

No reviews yet — be the first to review HUASHUO HSU0115.

Specifications

Gate Charge(Qg)44.5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)3.029nF

Technical details

P-Channel 100V 18A 54W Surface Mount TO-252-2

Related FETs & Power MOSFETs