HUASHUO HSU0107

HUASHUO · FETs & Power MOSFETs · MPN HSU0107

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)4.5nC@4.5V
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2W
RDS(on)700mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)20pF
Number1 P-Channel
Input Capacitance(Ciss)553pF

Technical details

P-Channel 100V 4.1A 2W Surface Mount TO-252

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