HUASHUO HSSX2901

HUASHUO · FETs & Power MOSFETs · MPN HSSX2901

No reviews yet — be the first to review HUASHUO HSSX2901.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)3.7nC@4.5V
Current - Continuous Drain(Id)800mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation300mW
RDS(on)500mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)-

Technical details

N-Channel+P-Channel Array 20V 0.8A 0.3W Surface Mount SOT-563

Related FETs & Power MOSFETs