HUASHUO HSSX2303

HUASHUO · FETs & Power MOSFETs · MPN HSSX2303

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)18nC@4.5V
Current - Continuous Drain(Id)800mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation150mW
RDS(on)800mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number2 P-Channel
Input Capacitance(Ciss)145pF

Technical details

P-Channel 20V 0.8A 0.15W Surface Mount SOT-563

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