HUASHUO HSSX2204

HUASHUO · FETs & Power MOSFETs · MPN HSSX2204

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)3.6nC@4.5V
Current - Continuous Drain(Id)600mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation150mW
RDS(on)500mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number2 N-Channel
Input Capacitance(Ciss)42pF

Technical details

N-Channel Array 20V 0.15W Surface Mount SOT-563

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