HUASHUO HSST3134

HUASHUO · FETs & Power MOSFETs · MPN HSST3134

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Specifications

Gate Charge(Qg)4.8nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)107pF
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation250mW
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)280mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)480pF
TypeN-Channel

Technical details

N-Channel 20V 0.9A 0.25W Surface Mount SOT-523

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