HUASHUO HSST3018

HUASHUO · FETs & Power MOSFETs · MPN HSST3018

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)2nC@4.5V
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation250mW
RDS(on)600mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)31pF

Technical details

N-Channel 30V 0.5A 0.25W Surface Mount SOT-523

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