HUASHUO HSSN3134

HUASHUO · FETs & Power MOSFETs · MPN HSSN3134

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Specifications

Gate Charge(Qg)1.6nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)9.2pF
RDS(on)200mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)92pF
TypeN-Channel

Technical details

N-Channel 20V 1A 350mW Surface Mount SOT-323

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