HUASHUO HSSN2N7002K

HUASHUO · FETs & Power MOSFETs · MPN HSSN2N7002K

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)500pC@10V
Current - Continuous Drain(Id)300mA
Output Capacitance(Coss)8pF
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)18pF

Technical details

60V 300mA 1.3V 300mW 1.8Ω@10V 1 N-channel SOT-323 Single FETs, MOSFETs RoHS

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