HUASHUO HSSK8811

HUASHUO · FETs & Power MOSFETs · MPN HSSK8811

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Specifications

Gate Charge(Qg)4.1nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)44pF
RDS(on)130mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)272pF
TypeP-Channel

Technical details

P-Channel 20V 1.5A 1.25W Surface Mount SOT-363

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