HUASHUO · FETs & Power MOSFETs · MPN HSSK8402
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| Gate Charge(Qg) | 600pC@4.5V |
|---|---|
| Drain to Source Voltage | 65V |
| Output Capacitance(Coss) | 7.4pF |
| Current - Continuous Drain(Id) | 130mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 380mW |
| RDS(on) | 2.3Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4.9pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 22pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 65V 0.13A 0.38W Surface Mount SOT-363