HUASHUO HSSK7800

HUASHUO · FETs & Power MOSFETs · MPN HSSK7800

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Specifications

Gate Charge(Qg)1.5nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)9.5pF
RDS(on)160mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)90pF
TypeN-Channel

Technical details

N-Channel Array 20V 1A 0.35W Surface Mount SOT-363

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