HUASHUO · FETs & Power MOSFETs · MPN HSSK6303
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| Gate Charge(Qg) | 1.64nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 450mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 50pF |
N-Channel Array 20V 0.5A 0.3W Surface Mount SOT-363