HUASHUO · FETs & Power MOSFETs · MPN HSSK2N7002
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| Gate Charge(Qg) | 500pC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| RDS(on) | 2.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 18.5pF |
N-Channel 60V 0.3A 0.35W Surface Mount SOT-363