HUASHUO · FETs & Power MOSFETs · MPN HSSK2905
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| Drain to Source Voltage | 20V |
|---|---|
| Current - Continuous Drain(Id) | 600mA;800mA |
| Output Capacitance(Coss) | 27pF;90pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 170mW;250mW |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 300mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 140pF;220pF |
| Type | N-Channel + P-Channel |
20V 800mV 300mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-363 Single FETs, MOSFETs RoHS