HUASHUO · FETs & Power MOSFETs · MPN HSSC3139
No reviews yet — be the first to review HUASHUO HSSC3139.
| Gate Charge(Qg) | 1.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 650mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 350mV |
| Pd - Power Dissipation | 150mW |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 500mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 150pF |
P-Channel 20V 0.65A 0.15W Surface Mount SOT-723