HUASHUO HSSC3134

HUASHUO · FETs & Power MOSFETs · MPN HSSC3134

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Specifications

Gate Charge(Qg)1.1nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)770mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))350mV
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)370mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)60pF

Technical details

N-Channel 20V 0.77A 0.15W Surface Mount SOT-723

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