HUASHUO HSSC2N7002K

HUASHUO · FETs & Power MOSFETs · MPN HSSC2N7002K

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)850pC@10V
Current - Continuous Drain(Id)210mA
Output Capacitance(Coss)8pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation160mW
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)18pF
TypeN-Channel

Technical details

60V 210mA 1.4V 160mW 1.4Ω@10V 1 N-channel N-Channel SOT-723 Single FETs, MOSFETs RoHS

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