HUASHUO · FETs & Power MOSFETs · MPN HSS8N06
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 8A |
| Output Capacitance(Coss) | 65pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 28mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.35nF |
| Type | N-Channel |
60V 8A 1.6V 1.4W 28mΩ@10V 1 N-channel N-Channel SOT-23L Single FETs, MOSFETs RoHS