HUASHUO HSS7N04

HUASHUO · FETs & Power MOSFETs · MPN HSS7N04

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)68pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.42W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)703pF
TypeN-Channel

Technical details

40V 7A 1.5V 1.42W 18mΩ@10V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS

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