HUASHUO · FETs & Power MOSFETs · MPN HSS6014
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| RDS(on) | 40mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.027nF |
N-Channel 60V 6A 2.5W Surface Mount SOT-23L