HUASHUO HSS5N10

HUASHUO · FETs & Power MOSFETs · MPN HSS5N10

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)130mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.008nF
TypeN-Channel

Technical details

N-Channel 100V 5A 1.4W Surface Mount SOT-23L

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