HUASHUO HSS5N04A

HUASHUO · FETs & Power MOSFETs · MPN HSS5N04A

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)4.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation720mW
RDS(on)30mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)38pF
Number1 N-channel
Input Capacitance(Ciss)445pF
TypeN-Channel

Technical details

40V 4.9A 1.5V 720mW 30mΩ@10V 1 N-channel N-Channel SOT-23S Single FETs, MOSFETs RoHS

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