HUASHUO · FETs & Power MOSFETs · MPN HSS4P06
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 89pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 90mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 831pF |
| Type | P-Channel |
P-Channel 60V 4A 1.4W Surface Mount SOT-23