HUASHUO · FETs & Power MOSFETs · MPN HSS3N10
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| Gate Charge(Qg) | 4.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| RDS(on) | 140mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 208pF |
N-Channel 100V 3A 1.2W Surface Mount SOT-23L