HUASHUO HSS3N06

HUASHUO · FETs & Power MOSFETs · MPN HSS3N06

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Specifications

Gate Charge(Qg)5.6nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)28pF
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.4W
RDS(on)95mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)260pF
TypeN-Channel

Technical details

N-Channel 60V 3.2A 1.4W Surface Mount SOT-23L

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