HUASHUO · FETs & Power MOSFETs · MPN HSS3409A
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| Gate Charge(Qg) | 7.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 3.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 43mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 650pF |
30V 3.2A 1W 43mΩ@4.5V 1 P-Channel SOT-23-3 Single FETs, MOSFETs RoHS