HUASHUO HSS3400E

HUASHUO · FETs & Power MOSFETs · MPN HSS3400E

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)5A
Output Capacitance(Coss)58pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation720mW
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)726pF
TypeN-Channel

Technical details

30V 5A 1V 720mW 23mΩ@10V 1 N-channel N-Channel SOT-23S Single FETs, MOSFETs RoHS

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