HUASHUO HSS2P10

HUASHUO · FETs & Power MOSFETs · MPN HSS2P10

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.4W
RDS(on)320mΩ@10V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 100V 2A 1.4W Surface Mount SOT-23L

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