HUASHUO HSS2N7002K

HUASHUO · FETs & Power MOSFETs · MPN HSS2N7002K

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Specifications

Gate Charge(Qg)1nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)300mA
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)2Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)38pF

Technical details

N-Channel 60V 300mA 0.35W Surface Mount SOT-23

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