HUASHUO HSS2N15

HUASHUO · FETs & Power MOSFETs · MPN HSS2N15

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)18nC@10V
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.3W
RDS(on)300mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)840pF
TypeN-Channel

Technical details

N-Channel 150V 1.8A 1.3W Surface Mount SOT-23

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